Etude des sources de bruit BF dans les diodes de commutation PIN a base de silicium amorphe hydrogene

摘要

We present experimental results on low frequency noise in amorphous PIN diodes under forward bias by pulses and by direct current. We have developed a new method using a differential amplifier to measure the noise in pulse regime. The study separates the white noise and the 1/f noise depending on current levels. The white noise can be evaluated by the shot noise through the various interfaces damped by their dynamic impedance. The excess noise shows a behaviour in f~(-1/2), due to defects in the intrinsic zone and a current dependence in I~(3/2), current limited by the NN~+ junction.