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Sensitive Elements of Pressure Transducers Made of Layered Intercalated InSe, GaSe, and Bi_2Te_3 Crystals

机译:由层状插入式InSe,GaSe和Bi_2Te_3晶体制成的压力传感器的敏感元件

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摘要

It is shown that layered InSe, GaSe, and Bi_2Te_3 semiconductors are promising for sensitive ele-ments of pressure transducers. Two ways for measuring pressure with layered crystals are suggested: from the pressure dependence of the intercalation parameter (current) and from the pressure dependence of the inter-calate electromotive force.
机译:结果表明,层状InSe,GaSe和Bi_2Te_3半导体有望用于压力传感器的敏感元件。提出了两种测量层状晶体压力的方法:从插层参数(电流)的压力依赖性和从层间电动势的压力依赖性。

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