溅射薄膜压力传感器敏感元件的制作工艺研究

摘要

Magnetron sputtering method with its particular advantages becomes the most potential technology in film materials’ prep-aration. Mask-sputtering method is used to develop the resistance layer of sensitive element of the pressure sensor and its failure in film material preparation with narrow width is found out in the experiment, so the photolithography technique is introduced. The exper-iment result shows that the this method is used to develop the resistance layer successful y.%磁控溅射技术以其在制备薄膜中的独特优点，成为获得高性能薄膜材料的重要手段。采用掩膜法溅射的方法制作薄膜压力传感器敏感元件的电阻层，发现了掩膜法溅射在制作小间距线宽的弊端，引入了先溅射后光刻的制作工艺，实验结果表明，该方法能成功制作出所需的电阻图形。