method for producing faces of collinear crystallographic axis c in layered crystals of InSe and GaSe

摘要

The invention relates to the field of chemistry and can be used for producing the diode structures. A method for producing faces of collinear crystallographic axisin layered crystals of InSe and GaSe consists in growing a layered crystal in a quartz ampoule. Before growing quartz plate is placed in ampoule, then a pre-synthesized material is placed there. The invention allows to manufacture samples of given size, provides saving of material, gives the possibility to avoid the mechanical treatment of the frontal surface of the crystal layers.