Magnesium outdiffusion from porous silicon carbide substrates during autodoping of gallium nitride epilayers

摘要

We have studied the outdiffusion of magnesium from silicon carbide substrates during autodoping of gallium nitride epilayers. The autodoping effect was observed in the case of porous substrates obtained by surface anodization of 6H-SiC wafers. It is established that the magnesium distribution profiles can be controlled by post-growth annealing. The fact of doping is confirmed by the results of photoluminescence measurements at 77 K.