首页>
外国专利>
Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate
Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate
展开▼
机译:碳化硅层的制造方法,氮化镓半导体装置及硅基板
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for producing a silicon carbide layer on a surface of a silicon substrate includes the step of irradiating the surface of the silicon substrate heated in a high vacuum at a temperature in a range of from 500° C. to 1050° C. with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface.
展开▼