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To tilt or not to tilt: Correction of the distortion caused by inclined sample surfaces in low-energy electron diffraction

机译:倾斜或不倾斜:校正低能电子衍射中样品表面倾斜引起的畸变

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摘要

Low-energy electron diffraction (LEED) is a widely employed technique for the structural characterization of crystalline surfaces and epitaxial adsorbates. For technical reasons the accessible reciprocal space is limited at a given primary electron energy E. This limitation may be overcome by sweeping ? to observe higher diffraction orders decisively enhancing the quantitative examination. Yet, in many cases, such as molecular films with rather large unit cells, the adsorbate reflexes become less pronounced at energies high enough to observe substrate reflexes. One possibility to overcome this problem is an intentional inclination of the sample surface during the measurement at the expense of the quantitative interpretability of then severely distorted diffraction patterns. Here, we introduce a correction method for the axially symmetric distortion in LEED images of tilted samples. We provide experimental confirmation for micro-channel plate LEED and spot-profile analysis LEED instruments using the (7 ×7) reconstructed surface of a Si(lll) single crystal as a reference sample. Finally, we demonstrate that the correction of this distortion considerably improves the quantitative analysis of diffraction patterns of adsorbates since substrate and adsorbate reflexes can be evaluated simultaneously. As an illustrative example we have chosen an epitaxial monolayer of 3,4,9,10-perylenetetracarboxylic dianhy-dride on Ag(lll) that is known to form a commensurate superstructure.
机译:低能电子衍射(LEED)是一种广泛用于晶体表面和外延吸附物结构表征的技术。出于技术原因,可访问的倒数空间限制在给定的一次电子能量E处。观察更高的衍射阶数可决定性地加强定量检查。然而,在许多情况下,例如具有相当大的晶胞的分子膜,被吸附物的反射在足够高的能量下变得不那么明显,足以观察到基底的反射。克服该问题的一种可能性是在测量过程中样品表面的有意倾斜,其代价是严重扭曲了衍射图案的定量解释性。在这里,我们介绍一种针对倾斜样本的LEED图像中的轴对称变形的校正方法。我们使用Si(III)单晶的(7×7)重建表面作为参考样品,为微通道板LEED和斑点轮廓分析LEED仪器提供了实验确认。最后,我们证明了这种变形的校正大大改善了吸附物衍射图的定量分析,因为可以同时评估基材和吸附物的反射率。作为说明性实例,我们选择了在Ag(III)上的3,4,9,10-per四甲酸二酐的外延单层,已知其形成相当的上层结构。

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