Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy

摘要

The spatial resolution and high sensitivity of tip-enhanced Raman spectroscopy allows the characterization of surface features on a nano-scale. This technique is used to visualize silicon-based structures, which are similar in width to the transistor channels in present leading-edge CMOS devices. The reduction of the intensive far-Held background signal is crucial for detecting the weak near-field contributions and requires beside a careful alignment of laser polarization and tip axis also the consideration of the crystalline sample orientation. Despite the chemical identity of the investigated sample surface, the structures can be visualized by the shift of the Raman peak positions due to the patterning induced change of the stress distribution within lines and substrate layer. From the measured peak positions the intrinsic stress within the lines is calculated and compared with results obtained by finite element modeling. The results demonstrate the capability of the tip-enhanced Raman technique for strain analysis on a sub-50 nm scale.