Laser-induced extreme UV radiation sources for manufacturing next-generation integrated circuits

摘要

The development of high-power discharge sources emitting in the 13.5 +/- 0.135-nm spectral band is of current interest because they are promising for applications in industrial EUV (extreme ultraviolet) lithography for manufacturing integrated circuits according to technological precision standards of 22 nm and smaller. The parameters of EUV sources based on a laser-induced discharge in tin vapours between rotating disc electrodes are investigated. The properties of the discharge initiation by laser radiation at different wavelengths are established and the laser pulse parameters providing the maximum energy characteristics of the EUV source are determined. The EUV source developed in the study emits an average power of 276 W in the 13.5 +/- 0.135-nm spectral band on conversion to the solid angle 2 pi sr in the stationary regime at a pulse repetition rate of 3000 Hz.