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A technique to measure the flatness of next-generation 450 mm wafers using a three-point method with an autonomous calibration function

机译:一种使用具有自动校准功能的三点法测量下一代450毫米晶圆平面度的技术

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摘要

In this paper, a three-point method with an autonomous calibration function is proposed to measure the flatness of next-generation 450 mm wafers. The measuring method is comprised of the following two processes: (1) the measurement of the flatness of the wafer across the circumference of the circle by three displacement sensors that are built-in to the wafer holder and (2) the measurement along several straight lines that pass through the rotational center point and two points on the circumference of the circle while changing the straight line for measurement by rotating the wafer step by step. Through these two processes, the flatness of the wafer can be determined by the proposed algorithm, which can automatically reduce the influence of motion errors and the zero-difference of the three sensors. The conceptual design and the algorithm utilized in the proposed method are explained using theoretical analyses and numerical calculations. The results of this study are as follows: the expanded uncertainty of wafer flatness is approximately 6.8 and 0.3 (mu)m when the sampling number for the measurement across the circumference of the circle with a radius of 220 mm is 10~(3) and 10~(6), respectively. The measurements were observed under the practical conditions that: (a) the sampling number for the measurement along several straight lines that pass through the rotational center point and two points on the circumference of the circle that has a radius of 220mm is 100, (b) the radius of the circular sensor is 1 mm, (c) the standard deviation of the sensor is 0.1 (mu)m, and (d) the adjacent sensor interval is 30 mm.
机译:本文提出了一种具有自动校准功能的三点法来测量下一代450 mm晶片的平面度。测量方法包括以下两个过程:(1)通过内置在晶片固定器中的三个位移传感器测量圆圆周上晶片的平整度;(2)沿几条直线进行测量通过旋转中心点和圆圆周上两个点的直线,同时通过逐步旋转晶片来更改测量直线。通过这两个过程,可以通过提出的算法确定晶片的平坦度,该算法可以自动减少运动误差和三个传感器的零差的影响。通过理论分析和数值计算来解释所提出的方法中使用的概念设计和算法。研究结果如下:当半径为220mm的圆的圆周上的测量采样数为10〜(3)时,晶片平整度的扩展不确定度分别约为6.8和0.3μm。 10〜(6)在实际条件下观察到这些测量结果:(a)沿通过旋转中心点和半径为220mm的圆的圆周上的两个点的几条直线的测量采样数为100,(b )圆形传感器的半径为1 mm,(c)传感器的标准偏差为0.1μm,并且(d)相邻传感器间隔为30 mm。

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