METHOD FOR PRODUCING SEMICONDUCTOR WAFERS COMPOSED OF SILICON HAVING A DIAMETER OF AT LEAST 450 MM, AND SEMICONDUCTOR WAFER COMPOSED OF SILICON HAVING A DIAMETER OF 450 MM

摘要

the present invention is a silicon wafer consisting of a semiconductor formed by a method according to the present method to increase the diameter of the conical region having (conical section) and, at least 450 mm in diameter and at least 800 mm in length having a cylindrical region adjacent (adjoining cylindrical section) having a single crystal in a crucible containing a melt from a given impression which would raise the rate-conical at least 1.8 times greater than the average pulling speed of the pulling speed of raising a transition area from the cylindrical area for raising the cylindrical area Higher - and growing at least 20 kW cooling power of a single crystal as by cooling to, to supply heat to the single crystals are grown from the side walls of the crucible - the gap has a height of at least 70 mm, enclosing the single crystal being grown is present between the surface of the heat shield and the melt-and , to a semiconductor wafer sliced from a cylindrical region, a plurality of semiconductor wafer having a region with a v- defect that extends to the edge portion of the semiconductor wafer from the center of the semiconductor wafer - comprises The present method also relates to a silicon semiconductor wafer configured, the semiconductor wafer has a diameter of 450 mm, has an area having a defect v- that extends to the edge portion of the semiconductor wafer from the center of the semiconductor wafer. ;