Use of electroplated copper for on-chipmetallization in ultra-large-scale integrated circuits (ULSI) devicesis gaining momentum because of the low cost and high throughputof the process. Electroplated lines and trenches with submicrondimensions, however, are strongly affected by changes in thecomposition of the plating solution, thereby creating a highdemand for control techniques. The most dynamic ingredients ofelectroplating solutions are organic additives. Even a smallimbalance between components of the additive system can causevarious defects in the filling of the trenches and properties ofelectroplated copper. On-line monitoring and control of theseadditive components is therefore desirable. Cyclic voltammetricstripping (CVS) analysis has long been used for just such apurpose in the manufacturing of printed circuits.
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