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Effects of simplified pretreatment process on the morphology of W-Cu composite powder prepared by electroless plating and its sintering characterization

机译:简化的预处理工艺对化学镀W-Cu复合粉末形貌的影响及其烧结特性

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摘要

Tungsten-copper (W-Cu) composite powder was prepared by electroless plating with a simplified pretreatment. Morphologies and coposition of the original W, simply pretreated W, W-Cu composite powder, and sintered W-Cu samples were analyzed by field emission scanning electron microscopy (FE-SEM), and energy dispersion spectrometry (EDS). Cold compaction was carried out under the pressure of 400 MPa while sintering at 1200 ℃. The relative density and electrical conductivity of the sintered samples were investigated. The results show that the defect formed on the surface of the simply treated W powder favors the adsorption, nucleation, and growth of Cu grain in subsequent electroless copper plating. Cellular projection at the same conditions on the surface of the simply treated W powder increased with the increase in HF content up to a certain range. The W-Cu composite powder obtained after electroless copper plating became more even; however, continued increase in HF content to a certain value caused the decrease in the number of defects that formed on the surface of pretreated W powder as well as the decrease in the amount of Cu grains adsorbed on the surface of W powder during electroless copper plating, but the number of free and not be adsorbed Cu grains were increased. Lastly, the obtained evenness degree of the W-Cu composite powder was reduced. At 1200 °C and 400 MPa, the sintered specimen exhibited optimum performance, with the relative density reaching as high as 95.04% and superior electrical conductivity of IACS at 53.24%, which doubles the national average of 26.77%.
机译:钨-铜(W-Cu)复合粉末是通过化学镀并经过简化的预处理而制备的。通过场发射扫描电子显微镜(FE-SEM)和能谱分析(EDS)分析了原始W,简单预处理的W,W-Cu复合粉末和W-Cu烧结样品的形貌和成分。在1200℃烧结的同时在400 MPa的压力下进行冷压。研究了烧结样品的相对密度和电导率。结果表明,在经过简单处理的W粉末表面形成的缺陷有利于后续化学镀铜中Cu颗粒的吸附,成核和生长。在相同条件下,经过简单处理的W粉末表面的细胞投影随着HF含量的增加而增加,直至达到一定范围。化学镀铜后得到的W-Cu复合粉末更加均匀。但是,HF含量持续增加到一定值,导致在化学镀铜过程中预处理的W粉表面形成的缺陷数量减少,W粉表面吸附的Cu晶粒数量减少。 ,但是游离的和未被吸附的铜晶粒的数量增加了。最后,降低了获得的W-Cu复合粉末的均匀度。在1200°C和400 MPa下,烧结样品表现出最佳性能,相对密度高达95.04%,IACS的优良电导率达到53.24%,是全国平均值26.77%的两倍。

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