首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >A 215-F² Bistable Physically Unclonable Function With an ACF of <0.005 and a Native Bit Instability of 2.05% in 65-nm CMOS Process
【24h】

A 215-F² Bistable Physically Unclonable Function With an ACF of <0.005 and a Native Bit Instability of 2.05% in 65-nm CMOS Process

机译:215平方米的双稳态物理不可渗透功能,ACF为<0.005,目的位不稳定为2.05%,在65-NM CMOS过程中

获取原文
获取原文并翻译 | 示例

摘要

This article presents a novel class of bistable physically unclonable functions (PUFs) for security-oriented applications. The traditional cross-coupled bistable PUF cell is divided into P-net and N-net, wherein the P-net (N-net) multiplexing acts as the shared head (foot), and the N-net (P-net) duplicating multiple acts as the PUF cell. The proposed PUF was fabricated in a Taiwan Semiconductor Manufacturing Company (TSMC) 65-nm process with full-custom design. It can parallelly generate 128-bit identifications (IDs) in one clock cycle owing to the random access word-level readout framework. The measurement results show that the randomness and uniqueness of the proposed PUF are consistent with those of the state-of-the-art works. In addition, the proposed PUF has the following features: 1) the PUF cell is composed only of four nMOS transistors with a minimum feature size of 215-F2; 2) the native bit instability at the golden condition (i.e., 1.2 V, 25 °C) with 500 evaluations is only 2.05%, showing a desirable native stability against supply noise; 3) the bit-error-rate dependences of the voltage and temperature are 3.35%/V and 0.011%/°C, respectively, with the voltage varying within the range 1.0–1.4 V and the temperature varying within the range −40 °C to 125 °C; 4) an autocorrelation function of 0.0049 at a 95% confidence level is achieved and is the lowest reported value to date; and 5) the energy efficiency and throughput at the maximum operating frequency (i.e., 433 MHz) are 99.48 fJ/b and 55.5 Gb/s, respectively.
机译:本文为安全为导向的应用提供了一类新型的双稳态物理不可渗透功能(PUFS)。传统的交叉耦合的双稳态PUF小区被分成P-NET和N-NET,其中P-NET(N-NET)复用用作共享头(脚),并且N-NET(P-NET)复制多个充当PUF细胞。拟议的PUF是在台湾半导体制造公司(台积电)65纳米工艺中制造的全定制设计。由于随机接入词级读出框架,它可以在一个时钟周期中并行生成128位标识(IDS)。测量结果表明,所提出的PUF的随机性和唯一性与最先进的作品的随机性和唯一性符合。此外,所提出的PUF具有以下特点:1)PUF小区仅由四个NMOS晶体管组成,最小特征大小为215-F 2 ; 2)具有500个评价的金色条件(即1.2V,25°C)的天然钻头不稳定性仅为2.05%,显示出可逆的原始稳定性免受供应噪声的稳定性; 3)电压和温度的误码率依赖性分别为3.35%/ v和0.011%/°C,电压在1.0-1.4 V范围内变化,温度在-40°C范围内变化到125°C; 4)实现了95%置信水平0.0049的自相关函数,是迄今为止最低的报告值; 5)最大工作频率(即,433MHz)的能效和产量分别为99.48 FJ / B和55.5 GB / s。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号