机译:215平方米的双稳态物理不可渗透功能,ACF为<0.005,目的位不稳定为2.05%,在65-NM CMOS过程中
College of Electrical and Electronic Engineering Wenzhou University Wenzhou China;
College of Electrical and Electronic Engineering Wenzhou University Wenzhou China;
Oujiang College Wenzhou University Wenzhou China;
College of Electrical and Electronic Engineering Wenzhou University Wenzhou China;
Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo China;
Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo China;
Transistors; Logic gates; Security; SRAM cells; Very large scale integration; Multiplexing;
机译:使用软氧化物击穿的物理上无法克隆的功能,具有40%CMOS中的0%原始BER和51.8 fJ / bit
机译:静态物理上无法克隆的功能,可确保芯片识别安全,在0.6–1 V和65 nm的15 fJ / bit时具有1.9–5.8%的固有位不稳定性
机译:0.67-μm2/位电池双晶体管泄漏的物理上不可渗透功能,目的位不稳定为0.89%,65 nm
机译:14.3 15fJ / b静态物理不可克隆功能,用于安全地识别芯片,具有<2%的固有位不稳定性和140nm的Inter / Intra PUF汉明距离,间距为65nm
机译:具有物理不可克隆功能的防篡改密码处理。
机译:0.67-μm2 /位电池两晶体管泄漏的物理上不可渗透功能,目的位 - 不稳定性为0.89%,65 nm