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LVDCSL: a high fan-in, high-performance, low-voltage differential current switch logic family

机译:LVDCSL:高扇入,高性能,低压差分电流开关逻辑系列

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This paper presents a low voltage differential current switch logic (LVDCSL) gate capable of achieving high performance for large fan-in gates. High fan-in is enabled by using a large height predischarged N-channel metal-oxide-semiconductor (NMOS) trees. The power penalty of an increased number of internal nodes in the gate is mitigated by restricting their voltage swings. The salient features of this low-voltage DCSL family are high speed for high fan-in large stack height NMOS trees, low power due to restricted internal voltage swings, simple interface to static complementary metal-oxide-semiconductor (CMOS), and a latching nature which locks out inputs once outputs are evaluated. Results show that LVDCSL is capable of working at under 2 V in a 0.35% CMOS process while being faster than comparable Domino gates. At the same time total power consumption is reduced. LVDCSL achieves 40% delay improvement and 22% power reduction in comparison with dual rail Domino gates for 8 bit carry look-ahead circuits. Results for the critical path of an adder reveal that the complexity afforded by the gate, effectively decreases the number of logic levels and leads to improved performance.
机译:本文提出了一种低压差动电流开关逻辑(LVDCSL)门,该门能够为大型扇入门实现高性能。通过使用大高度的预放电N沟道金属氧化物半导体(NMOS)树,可以实现高扇入。通过限制其内部电压摆幅,可以减轻栅极内部节点数量增加带来的功耗损失。该低压DCSL系列的显着特点是:高速,高扇入,大堆叠高度的NMOS树,由于内部电压波动受限而导致的低功耗,与静态互补金属氧化物半导体(CMOS)的简单接口以及闩锁一旦对输出进行评估,就会锁定输入的性质。结果表明,LVDCSL能够以0.35%的CMOS工艺在2 V以下的电压下工作,同时比同类Domino门更快。同时减少了总功耗。与用于8位进位预读电路的双轨Domino门相比,LVDCSL的延迟提高了40%,功耗降低了22%。加法器关键路径的结果表明,门提供的复杂性有效地减少了逻辑级别的数量并提高了性能。

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