A layout-based schematic method for very high-speed CMOS cell design

摘要

In very high-speed CMOS cell design, the result of schematic simulation is inaccurate because of missing parasitic components, such as diodes and parasitic capacitances. Designer cannot pass enough information to the simulator by conventional transistor symbols, therefore, simulation error occurs. In this paper, we address a layout-based schematic (LBS) method for high-speed CMOS cell design. In this method, we introduce several types of MOS transistors and estimate parasitic wire capacitances by using layout knowledge. The simulation results show that the difference between LBS and real layout is much smaller, less than 3% in rise time, compared to in the worst case of up to 65% in the original schematic. This method can be applied to both digital and analog circuits and it is helpful for layout automation. Time and cost will be reduced in high-speed circuit design.