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On circuit techniques to improve noise immunity of CMOS dynamic logic

机译:用于提高CMOS动态逻辑的抗干扰性的电路技术

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摘要

Dynamic CMOS logic circuits are widely employed in high-performance VLSI chips in pursuing very high system performance. However, dynamic CMOS gates are inherently less resistant to noises than static CMOS gates. With the increasing stringent noise requirement due to aggressive technology scaling, the noise tolerance of dynamic circuits has to be first improved for the overall reliable operation of VLSI chips designed using deep submicron process technology. In the literature, a number of design techniques have been proposed to enhance the noise tolerance of dynamic logic gates. An overview and classification of these techniques are first presented in this paper. Then, we introduce a novel noise-tolerant design technique using circuitry exhibiting a negative differential resistance effect. We have demonstrated through analysis and simulation that using the proposed method the noise tolerance of dynamic logic gates can be improved beyond the level of static CMOS logic gates while the performance advantage of dynamic circuits is still retained. Simulation results on large fan-in dynamic CMOS logic gates have shown that, at a supply voltage of 1.6 V, the input noise immunity level can be increased to 0.8 V for about 10% delay overhead and to 1.0 V for only about 20% delay overhead.
机译:动态CMOS逻辑电路被广泛应用于高性能VLSI芯片中,以追求非常高的系统性能。但是,动态CMOS栅极固有地比静态CMOS栅极具有更低的抗噪声能力。随着积极的技术扩展,对噪声的严格要求不断提高,对于采用深亚微米工艺技术设计的VLSI芯片的整体可靠运行,必须首先提高动态电路的噪声容限。在文献中,已经提出了许多设计技术来增强动态逻辑门的噪声容限。本文首先对这些技术进行了概述和分类。然后,我们介绍了一种新型的耐噪声设计技术,该技术使用了呈现负差分电阻效应的电路。通过分析和仿真我们已经证明,使用所提出的方法,可以将动态逻辑门的噪声容限提高到超过静态CMOS逻辑门的水平,同时仍保留了动态电路的性能优势。在大型扇入动态CMOS逻辑门上进行的仿真结果表明,在1.6 V的电源电压下,输入噪声抗扰度水平可以在大约10%的延迟开销下增加到0.8 V,而在仅大约20%的延迟开销下可以增加到1.0 V高架。

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