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Design and Analysis of Isolated Noise-Tolerant (INT) Technique in Dynamic CMOS Circuits

机译:动态CMOS电路中隔离噪声容忍(INT)技术的设计与分析

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摘要

Along with the progress of advanced VLSI technology, noise issues in dynamic circuits have become an imperative design challenge. The twin-transistor design, is the current state-of-the-art design to enhance the noise immunity in dynamic CMOS circuits. To achieve the high noise-tolerant capability, in this paper, we propose a new isolated noise-tolerant (INT) technique which is a mechanism to isolate noise tolerant circuits from noise interference. Simulation results show that the proposed 8-bit INT Manchester adder can achieve 1.66times average noise threshold energy (ANTE) improvement. In addition, it can save 34% power delay product (PDP) in low signal-to-noise ratio (SNR) environments as compared with the 8-bit twin-transistor Manchester adder under TSMC 0.18-mu m process.
机译:随着先进的VLSI技术的进步,动态电路中的噪声问题已成为当务之急的设计挑战。双晶体管设计是当前的最新设计,可增强动态CMOS电路的抗噪能力。为了实现高耐噪能力,在本文中,我们提出了一种新的隔离耐噪(INT)技术,该技术是一种将耐噪电路与噪声干扰隔离的机制。仿真结果表明,所提出的8位INT曼彻斯特加法器可以提高1.66倍的平均噪声阈值能量(ANTE)。此外,与采用TSMC 0.18微米工艺的8位双晶体管曼彻斯特加法器相比,它在低信噪比(SNR)环境中可以节省34%的功率延迟乘积(PDP)。

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