Row-Based Power-Gating: A Novel Sleep Transistor Insertion Methodology for Leakage Power Optimization in Nanometer CMOS Circuits

摘要

Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has shown to offer a viable solution to the problem with a small penalty in performance. This paper focuses on leakage power reduction through automatic insertion of sleep transistors for power-gating. In particular, we propose a novel, layout-aware methodology that facilitates sleep transistor insertion and virtual-ground routing on row-based layouts. We also introduce a clustering algorithm that is able to handle simultaneously timing and area constraints, and we extend it to the case of multi- $V_{t}$ sleep transistors to increase leakage savings. The results we have obtained on a set of benchmark circuits show that the leakage savings we can achieve are, by far, superior to those obtained using existing power-gating solutions and with much tighter timing and area constraints.