SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage

摘要

Increasing variations in device parameters significantly degrades the write-ability of SRAM cells in deep sub-100 nm CMOS technology. In this paper, a transient negative bit-line voltage technique is presented to improve write-ability of SRAM cell. Capacitive coupling is used to generate a transient negative voltage at the low-going bit-line during Write operation without using any on-chip or off-chip negative voltage source. Statistical simulations in a 45–nm PD/SOI technology show a $10^{3}{rm X}$ reduction in the Write-failure probability with the proposed method.