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Area Efficient ROM-Embedded SRAM Cache

机译:区域有效的ROM嵌入式SRAM缓存

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摘要

There are many important applications, such as math function evaluation, digital signal processing, and built-in self-test, whose implementations can be faster and simpler if we can have large on-chip “tables” stored as read-only memories (ROMs). We show that conventional de facto standard 6T and 8T static random access memory (SRAM) bit cells can embed ROM data without area overhead or performance degradation on the bit cells. Just by adding an extra wordline (WL) and connecting the WL to selected access transistor of the bit cell (based on whether a 0 or 1 is to be stored as ROM data in that location), the bit cell can work both in the SRAM mode and in the ROM mode. In the proposed ROM-embedded SRAM, during SRAM operations, ROM data is not available. To retrieve the ROM data, special write steps associated with proper via connections load ROM data into the SRAM array. The ROM data is read by conventional load instruction with unique virtual address space assigned to the data. This allows the ROM-embedded cache (R-cache) to bypass tag arrays and translation look-aside buffers, leading to fast ROM operations. We show example applications to illustrate how the R-cache can lead to low-cost logic testing and faster evaluation of mathematical functions.
机译:有许多重要的应用程序,例如数学函数评估,数字信号处理和内置的自检,如果我们可以将大的片上“表”存储为只读存储器(ROM),则其实现可以更快,更简单。 )。我们表明,常规的事实上的标准6T和8T静态随机存取存储器(SRAM)位单元可以嵌入ROM数据,而不会在位单元上造成面积开销或性能下降。只需添加一条额外的字线(WL)并将WL连接到该位单元的选定访问晶体管(基于在该位置将0或1作为ROM数据存储),该位单元就可以在SRAM中工作模式和ROM模式。在建议的ROM嵌入式SRAM中,在SRAM操作期间,ROM数据不可用。要检索ROM数据,与正确的过孔连接相关的特殊写入步骤会将ROM数据加载到SRAM阵列中。通过常规的加载指令读取ROM数据,并为其分配了唯一的虚拟地址空间。这允许ROM嵌入式缓存(R-cache)绕过标签阵列和转换后备缓冲区,从而实现快速的ROM操作。我们以示例应用程序来说明R高速缓存如何导致低成本的逻辑测试和更快的数学函数评估。

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