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RECache: ROM-Embedded 8-Transistor SRAM Caches for Efficient Neural Computing

机译:RECache:ROM嵌入式8晶体管SRAM缓存,用于高效的神经计算

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One of the fast ways of evaluating complex math tables, transcendental functions, high-order polynomials etc. is by storing them in read-only memories (ROMs). However, storing large dedicated ROMs on-chip is not feasible as they incur large area overhead. Moreover, that part of the chip lies waste when ROMs are not in use. To that effect, we show at least three proposals to embed ROMs into on-chip caches using standard 8-transistor static random access memories (SRAMs). Just by adding an extra word-line (WL) or a source-line (SL), the same bit-cell can store a RAM bit, as well as a ROM bit, while maintaining the performance and area-efficiency of standard SRAMs. Moreover, due to the decoupled read/write port of the 8T-SRAMs, RAM data is not destroyed during ROM accesses, unlike prior works. We demonstrate the effectiveness of using such ROM-Embedded RAMs as caches (RECache). An improvement of up-to 19.4× in cache performance was achieved by using RECache under `ROM-intensive' workloads. Further, we expand the scope of RECache, and demonstrate its applicability in specialized neural hardware. Taking an example of spiking neural network (SNN) acceleration, an energy improvement of 1.7× and iso-area performance improvement of 1.9 × was achieved with RECache, compared to standard SRAM caches.
机译:评估复杂数学表,先验函数,高阶多项式等的快速方法之一是将它们存储在只读存储器(ROM)中。但是,在芯片上存储大型专用ROM是不可行的,因为它们会产生大面积的开销。而且,当不使用ROM时,芯片的那部分就浪费了。为此,我们展示了至少三个使用标准8晶体管静态随机存取存储器(SRAM)将ROM嵌入到片上缓存中的建议。只需添加一条额外的字线(WL)或源极线(SL),同一位单元就可以存储RAM位以及ROM位,同时保持标准SRAM的性能和面积效率。此外,由于8T-SRAM的读/写端口解耦,因此与先前的工作不同,在ROM访问期间RAM数据不会被破坏。我们演示了将此类ROM嵌入式RAM用作缓存(RECache)的有效性。通过在“ ROM密集型”工作负载下使用RECache,可以将缓存性能提高多达19.4倍。此外,我们扩展了RECache的范围,并展示了其在专用神经硬件中的适用性。以尖峰神经网络(SNN)加速为例,与标准SRAM缓存相比,使用RECache可以实现1.7倍的能量改善和1.9倍的等面积性能改善。

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