Exploiting Process Variation for Write Performance Improvement on NAND Flash Memory Storage Systems

摘要

The write performance of flash memory has been degraded significantly due to the recent density-oriented advancements of flash technology. Techniques have been proposed to improve the write performance by exploiting the varying strength of a flash block in its different worn-out stages. A block is written with a faster speed when it is new and strong, and gradually will be written with slower speeds as it is aging and becomes weak. Motivated by these works, this brief proposes a new technique by exploiting the significant process variation among flash blocks introduced by the advanced technology scaling. First, a write speed detection approach is proposed to identify the strength of each block. Then, a heuristic approach is proposed to exploit the speed variation among blocks for write performance improvement. A series of trace-driven simulations shows that the proposed approach generates substantial write performance improvement over state-of-the-art approaches by 30% on average.