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NANDFlashSim: Intrinsic Latency Variation Aware NAND Flash Memory System Modeling and Simulation at Microarchitecture Level

机译：NaNDFlashsim：微架构级别的内在延迟变化意识NaND闪存系统建模与仿真

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Myoungsoo Jung; Ellis Herbert; Wilson Iii; David Donofrio; John Shalf Mahmut Taylan K;
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年度 2013
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1. NANDFlashSim: High-Fidelity, Microarchitecture-Aware NAND Flash Memory Simulation [J] . Jung Myoungsoo, Choi Wonil, Gao Shuwen, ACM Transactions on Storage . 2016,第2期

机译：NANDFlashSim：高保真，微体系结构感知的NAND闪存仿真
2. SREA: A self-recovery effect aware wear-leveling strategy for the reliability extension of NAND flash memory [J] . Wei Debao, Qiao Liyan, Chen Xiaoyu, Microelectronics & Reliability . 2019,第Sepa期

机译：领域：一种自我恢复效应感知损耗均衡策略，用于扩展NAND闪存的可靠性
3. HaWL: Hidden Cold Block-Aware Wear Leveling Using Bit-Set Threshold for NAND Flash Memory [J] . Seon Hwan KIM, Ju Hee CHOI, Jong Wook KWAK IEICE transactions on information and systems . 2016,第4期

机译：HaWL：使用位设置阈值的NAND闪存进行隐藏的冷块感知磨损均衡
4. NANDFlashSim: Intrinsic latency variation aware NAND flash memory system modeling and simulation at microarchitecture level [C] . Jung Myoungsoo, Wilson Ellis Herbert, Donofrio David, Mass Storage Systems and Technologies (MSST), 2012 IEEE 28th Symposium on . 2012

机译：NANDFlashSim：微体系结构级别的固有延迟变化感知NAND闪存系统建模和仿真
5. Write-Activity-Aware NAND Flash Memory Management for PCM-based Embedded Systems. [D] . Liu, Duo. 2012

机译：基于PCM的嵌入式系统的可写活动感知NAND闪存管理。
6. Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems [O] . Min Huang, Zhaoqing Liu, *, 2014

机译：非对称编程：基于MLC NAND闪存的传感器系统的高度可靠的元数据分配策略
7. FSAF: File system aware flash translation layer for nand flash memories [O] . Sai Krishna Mylavarapu, Siddharth Choudhuri, Aviral Shrivastava, 2013

机译：FSAF：适用于nand闪存的文件系统感知闪存转换层

NANDFlashSim: Intrinsic Latency Variation Aware NAND Flash Memory System Modeling and Simulation at Microarchitecture Level

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