A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell

摘要

A novel 8-transistor (8T) static random access memory cell with improved data stability in subthreshold operation is designed. The proposed single-ended with dynamic feedback control 8T static RAM (SRAM) cell enhances the static noise margin (SNM) for ultralow power supply. It achieves write SNM of and as that of isoarea 6T and read-decoupled 8T (RD-8T), respectively, at 300 mV. The standard deviation of write SNM for 8T cell is reduced to and as that for 6T and RD-8T, respectively. It also possesses another striking feature of high read SNM , , and as that of 5T, 6T, and RD-8T, respectively. The cell has hold SNM of , , and as that of 5T, 6T, and RD-8T, respectively. The write time is 71% lesser than that of single-ended asymmetrical 8T cell. The proposed 8T consumes less write power , , and as that of 5T, 6T, and isoarea RD-8T, respectively. The read - ower is of 5T, of 6T, and of RD-8T. The power/energy consumption of 1-kb 8T SRAM array during read and write operations is and , respectively, of 1-kb 6T array. These features enable ultralow power applications of 8T.