Implementation of Low Power 8T SRAM Cell with Dynamic Feedback Control using AVLG Technique

摘要

An 8T-SRAM cell using Adoptive Voltage Level Ground (AVLG) technique with better performance, low power consumption and less leakage power has been implemented. The proposed 8T improves the circuit performance at ultra-low power supplies. It attains less power consumption than single ended 8T SRAM cell. By using AVLG technique the circuit consumes less power, even though the no.of transistors and the area are high.