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Design of Low-Voltage High-Speed CML D-Latches in Nanometer CMOS Technologies

机译:纳米CMOS技术的低压高速CML D锁存器设计

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This paper presents the design of a novel low-voltage high-speed D-latch circuit suitable for nanometer CMOS technologies. The proposed topology is compared against the low-voltage triple-tail D-latch and its advantages are demonstrated both by simulations, under different performance/power consumption tradeoffs with a 40-nm CMOS technology, and theoretically, thanks to a simple model of the propagation delay derived for both low-voltage topologies. In order to further demonstrate the advantages of the proposed topology, it has also been used to design a D flip-flop (DFF), where thanks to the feature to need just 1 clock differential pair; a further speed improvement is achieved over the conventional triple-tail topology. Indeed, by comparing a two-stage frequency divider designed using both the triple-tail DFF and the proposed folded DFF, a 54% improvement in the maximum operating frequency is found when using the proposed folded DFF.
机译:本文介绍了一种适用于纳米CMOS技术的新型低压高速D锁存电路的设计。将拟议的拓扑与低压三尾D锁存器进行比较,并通过仿真(在40nm CMOS技术的不同性能/功耗折衷方案下)以及从理论上讲,由于采用了简单的EDM模型,证明了其拓扑结构的优势。两种低压拓扑均得出传播延迟。为了进一步展示所提出的拓扑的优势,它还被用于设计D触发器(DFF),由于该功能仅需要1个时钟差分对;因此,该触发器可用于D触发器。与传统的三重尾部拓扑相比,可以进一步提高速度。实际上,通过比较使用三尾DFF和建议的折叠DFF设计的两级分频器,当使用建议的折叠DFF时,最大工作频率提高了54%。

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