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Energy-Efficient and Process-Variation-Resilient Write Circuit Schemes for Spin Hall Effect MRAM Device

机译:自旋霍尔效应MRAM器件的节能和工艺变化弹性写电路方案

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In this paper, various energy-efficient write schemes are proposed for switching operation of spin hall effect (SHE)-based magnetic tunnel junctions (MTJs). A transmission gate (TG)-based write scheme is proposed, which provides a symmetric and energy-efficient switching behavior. We have modeled an SHE-MTJ using precise physics equations, and then leveraged the model in SPICE circuit simulator to verify the functionality of our designs. Simulation results show the TG-based write scheme advantages in terms of device count and switching energy. In particular, it can operate at 12% higher clock frequency while realizing at least 13% reduction in energy consumption compared to the most energy-efficient write circuits. We have analyzed the performance of the implemented write circuits in presence of process variation (PV) in the transistors’ threshold voltage and SHE-MTJ dimensions. Results show that the proposed TG-based design is the second most PV-resilient write circuit scheme for SHE-MTJs among the implemented designs. Finally, we have proposed the 1TG-1T-1R SHE-based magnetic random access memory (MRAM) bit cell based on the TG-based write circuit. Comparisons with several of the most energy-efficient and variation-resilient SHE-MRAM cells indicate that 1TG-1T-1R delivers reduced energy consumption with 43.9% and 10.7% energy-delay product improvement, while incurring low area overhead.
机译:在本文中,针对基于自旋霍尔效应(SHE)的磁性隧道结(MTJ)的开关操作,提出了各种节能写方案。提出了一种基于传输门(TG)的写入方案,该方案可提供对称且节能的开关行为。我们已经使用精确的物理方程对SHE-MTJ进行了建模,然后利用SPICE电路模拟器中的模型来验证我们设计的功能。仿真结果表明,基于TG的写入方案在器件数量和开关能量方面具有优势。尤其是,与最节能的写电路相比,它可以在高12%的时钟频率下工作,同时实现至少13%的能耗降低。在晶体管的阈值电压和SHE-MTJ尺寸存在工艺变化(PV)的情况下,我们分析了已实现的写入电路的性能。结果表明,所提出的基于TG的设计是SHE-MTJ的第二高PV弹性写电路方案。最后,我们基于基于TG的写电路提出了基于1TG-1T-1R SHE的磁性随机存取存储器(MRAM)位单元。与几个最节能和具有可变弹性的SHE-MRAM单元进行比较后发现,1TG-1T-1R降低了能耗,产品能耗降低了43.9%和10.7%,同时还降低了面积开销。

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