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机译:通过脉冲激光沉积在Si(100)上生长的高取向金属SmS膜
National Research Nuclear University "Moscow Engineering Physics Institute," Moscow 115409, Russia ,Russian Research Center "Kurchatov Institute," NBIC Center, Moscow 123182, Russia;
Russian Research Center "Kurchatov Institute," NBIC Center, Moscow 123182, Russia;
Russian Research Center "Kurchatov Institute," NBIC Center, Moscow 123182, Russia;
National Research Nuclear University "Moscow Engineering Physics Institute," Moscow 115409, Russia;
National Research Nuclear University "Moscow Engineering Physics Institute," Moscow 115409, Russia ,Russian Research Center "Kurchatov Institute," NBIC Center, Moscow 123182, Russia;
samarium sulfide; thin films; metal/dielectric phase transition; pulsed laser deposition; si(100);
机译:通过脉冲激光沉积在非晶衬底上生长的高度(100)取向的Pb(Zr_(0.52)Ti_(0.48))O_3 / LaNiO_3膜
机译:通过脉冲激光沉积生长的高(100)取向成分梯度(Ba_(0.7)Sr_(0.3))(Sn_xTi_(1-x))O_3薄膜的可调谐性和介电常数-温度特性
机译:快速重离子辐照对脉冲激光沉积生长高c轴取向LSMO薄膜表面形貌的影响
机译:脉冲激光沉积法制备的用于等离子体器件的与基底无关的高金属TiN膜
机译:通过脉冲激光沉积制备半金属磁性氧化物薄膜的材料物理学:控制锶铁钼氧化物和铬氧化物薄膜的晶体结构和近表面性质。
机译:脉冲激光沉积生长的(001)和(111)取向钙钛矿高铁酸盐薄膜的外延结构
机译:通过脉冲激光沉积在LaAlO3缓冲的Si(100)衬底上的高c轴取向CaRuO3薄膜