Highly c-axis oriented CaRuO3 thin films on LaAlO3 buffered Si(100) substrates by pulsed laser deposition

摘要

Highly c-axis oriented CaRuO3 thin films were prepared on LaAlO3 buffered Si(100) substrates at 650°C by pulsed laser deposition. The buffer layer had a significant effect on the microstructure and electrical properties of the subsequent CaRuO3 thin films. Typical columnar grown CaRuO3 films were available using LaAlO3 as a buffer layer, although the buffer layer was not well-crystallized at the deposition temperature. The resistivity of the highly oriented CaRuO 3 thin film was 287.8 μΩ·cm at room temperature. The film showed typical metallic behaviour and its resistivity was sufficiently low to be used as a buffer layer in superconductor tapes or electrode materials in dielectrics devices.