TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

摘要

Technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon-on-insulator (SOI) TeraFETs are in good agreement with the measured current-voltage characteristics and the response to the sub-THz radiation. They allowed us to establish the physical mechanism of the observed response saturation at high intensities, not reproduced by the analytical model. By activating or deactivating different physical mechanisms in the TCAD models, we show that the response saturation is caused by the gate leakage for AlGaAs/InGaAs heterostructure field effect transistors (HFETs) and AlGaN/GaN HFETs and by the avalanche effect for SOI mosfets.