Advances on TCAD numerical modelling of radiation damage effects in silicon detectors for HL-LHC operations

摘要

In this work we present a surface radiation damage effects model based on the introduction of amphoteric, uniform energy band distributed deep-level defects. The main characteristic parameters of the surface damage, e.g. the equivalent oxide charge and interface trap densities, have been extracted from experimental measurements carried out on test structures manufactured by the three foundries: HPK, FBK and Infineon. The surface damage model has been coupled with a bulk damage model based on multiple, single-level defects with tunable capture-cross sections. The model is able to reproduce the measurements carried out on irradiated test structures in terms of C-V curves, interstrip resistance as well as charge collection of segmented detectors.