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机译:集成宽带蝴蝶结天线的高灵敏度AlGaN / GaN HEMT太赫兹探测器
Goethe Univ Frankfurt Phys Inst D-60438 Frankfurt Germany|Fraunhofer ITWM Ctr Mat Characterizat & Testing D-67663 Kaiserslautern Germany;
Leibniz Inst Hochstfrequenztech FBH Ferdinand Braun Inst D-12489 Berlin Germany;
Goethe Univ Frankfurt Phys Inst D-60438 Frankfurt Germany;
Vilnius Univ Inst Appl Electrodynam & Telecommun LT-10257 Vilnius Lithuania;
Vilnius Univ Inst Appl Electrodynam & Telecommun LT-10257 Vilnius Lithuania|Gen Jonas Zemaitis Mil Acad Ithuania LT-10322 Vilnius Lithuania;
Goethe Univ Frankfurt Phys Inst D-60438 Frankfurt Germany|Vilnius Univ Inst Appl Electrodynam & Telecommun LT-10257 Vilnius Lithuania|Inst High Pressure Phys PAS Ctr Terahertz Res & Applicat PL-01142 Warsaw Poland;
Goethe Univ Frankfurt Phys Inst D-60438 Frankfurt Germany|Leibniz Inst Hochstfrequenztech FBH Ferdinand Braun Inst D-12489 Berlin Germany;
Broadband antenna; field-effect transistors; GaN HEMT; plasmonic mixing; terahertz (THz) detectors;
机译:透镜和天线耦合的AlGaN / GaN-HEMT太赫兹检测器检测到的扭曲强度模式的起源
机译:太赫兹应用中与半导体单片集成的自互补蝶形天线的宽带等效电路建模
机译:AlGaN / GaN-HEMT太赫兹探测器在高温下的响应度和噪声特性
机译:基于GaN HEMT且集成蝴蝶结天线的高灵敏度宽带THz检测器
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明