In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth

摘要

Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(001). At a substrate temperature of 400 ℃ under As4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [110] periodicities to those observed in quenched STM studies.