Stability of In rows on Si(100) during STM observation

摘要

Structural and dynamical properties of In rows grown on the Si(100)2×1 surface were studied in detail by the scanning tunneling microscopy at room temperature. The rows on terraces are preferably pinned to C-type defects, the unpinned ends detach and attach In atoms during observation. Evolution of the rows was recorded with single atom precision. Time constants for detachment of atoms from the rows were measured as a function of row length; a stabilizing effect of the C-type defects was quantified. Dynamics of the In rows was found to depend on tunneling voltage. An effect of electric field is proposed to be responsible for the influence.