Slow etching of triangular pits on atomically flat monohydride terminated Si(111) surface in 40% NH_4F solution

Sang-Eun Bae; Jung-Hyun Yoon; Chi-Woo J. Lee

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Slow etching of triangular pits on atomically flat monohydride terminated Si(111) surface in 40% NH_4F solution

机译：在40％NH_4F溶液中慢速蚀刻原子平坦的一氢化物终止的Si（111）表面上的三角形凹坑

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摘要

The etching reactions of monohydride (MH) terminated Si(111) surface were observed in oxygen-free 40% NH_4F solution by an in situ electrochemical scanning tunneling microscope. The results showed that the MH silicon steps in triangular pits played an imp

机译：通过原位电化学扫描隧道显微镜观察了在无氧的40％NH_4F溶液中单氢化物（MH）终止的Si（111）表面的蚀刻反应。结果表明，三角形凹坑中的MH硅台阶起了很大的作用。

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《Surface Science》 |2008年第6期|p.1185-1190|共6页
作者
Sang-Eun Bae; Jung-Hyun Yoon; Chi-Woo J. Lee;
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作者单位

Department of Advanced Materials Chemistry, Korea University, Jochiwon, Choongnam 339-700, Republic of Korea;

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正文语种 eng
中图分类物理学;
关键词
monohydride terminated Si(111); silicon; electrochemical scanning tunneling microscopy; etching; atomically flat surface; triangular pit;

机译：一氢化物终止的Si（111）;硅;电化学扫描隧道显微镜;蚀刻;原子平坦的表面;三角形凹坑;

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2. Spectroscopic Studies on Electroless Deposition of Copper on Hydrogen-Terminated Si(111)Surface in NH_4F Solution Containing Cu(II)Ions [J] . In-Churl Lee, Sang-Eun Bae, Moon-Bong Song, Bulletin of the Korean Chemical Society . 2004,第2期

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3. Behavior of Hydrogen-Terminated Si(111) Surface in Oxygen-Dissolved NH_4F Solution with or without Cu(II) Ions [J] . Sang-Eun Bae, Jong-Soon Lee, In-Churl Lee, Bulletin of the Korean Chemical Society . 2005,第11期

机译：含或不含Cu（II）离子的溶氧NH_4F溶液中氢封端的Si（111）表面的行为
4. Layer-by-layer epitaxial growth of polar MgO (111) films with atomically flat surfaces [C] . Kosuke Matsuzaki, Hideo Hosono, Tomofumi Susaki Oxide-based materials and devices II . 2011

机译：具有原子平面的极性MgO（111）膜的逐层外延生长
5. Development of an ultra high vacuum scanning tunneling microscope. Scanning tunneling microscopy study of silicon(111) and germanium(111) surfaces etching under bromine exposure [D] . Fouchier, Marc 2000

机译：超高真空扫描隧道显微镜的开发。溴暴露下硅（111）和锗（111）表面蚀刻的扫描隧道显微镜研究
6. High-Density Modification of H-Terminated Si(111)Surfaces Using Short-ChainAlkynes [O] . SidharamP. Pujari, Alexei D. Filippov, Satesh Gangarapu, -1

机译：H终止的Si（111）的高密度修饰使用短链的曲面炔烃
7. Synthesis and Characterization of Atomically Flat Methyl-Terminated Ge(111) Surfaces [O] . Wong Keith T., Kim Youn-Geun, Soriaga Manuel P., 2015

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8. Etching of Si(111)-(7x7) and Si(1OO)-(2x1) Surfaces by Atomic Hydrogen [R] . Wei, Y., Li, L., Tsong, I. S. 1995

机译：原子氢蚀刻si（111） - （7x7）和si（100） - （2x1）表面

Slow etching of triangular pits on atomically flat monohydride terminated Si(111) surface in 40% NH_4F solution

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