Molybdenum disulfide thin films fabrication from multi-phase molybdenum oxide using magnetron sputtering and CVD systems together

摘要

Molybdenum disulfide (MoS_2) is a layered 2D semiconducting material with a tunable bandgap and a promising materials for next generation optoelectronics applications. In this study, the characterization of large-scale MoS_2 films obtained by sulfurization of Mo-O films grown in different thicknesses with reactive magnetron sputtering method at 400 °C are reported. At a critical deposition temperature of 400 °C, different phases of Mo-O structure with high photo-luminescent and bandgap were observed. Although there are no triangular domains, bandgaps and PL properties are close to few-layered MoS_2. The enhanced PL intensities attributed to the increasing amount of MoO_2 that may cause MoS_2 's folding and the large number of electrons from MoO_2 in the MoO_2-MoS_2 hetero-structure. The UV-VIS spectroscopy analysis shows that two bandgaps are presented with a low and high values which may extend a wide absorption range. One of these bandgaps is compatible with few-layer MoS2s and the other increases by the thickness of the Mo-O film grown by magnetron sputtering. This explains the absorption at low wavelengths, but also shows that the MoO_2 structure can be used to adjust the band gaps of MoS'S. The combined growth technique of magnetron sputtering and CVD is provided a high quality and homogeneous MoS_2 thin films for next-generation optoelectronics and nanoelectronic devices, as well as for other potential applications.