首页> 外国专利> METHOD FOR MANUFACTURING MOLYBDENUM OXIDE-CONTAINING THIN FILM STARTING MATERIAL FOR FORMING MOLYBDENUM OXIDE-CONTAINING THIN FILM AND MOLYBDENUM AMIDE COMPOUND

METHOD FOR MANUFACTURING MOLYBDENUM OXIDE-CONTAINING THIN FILM STARTING MATERIAL FOR FORMING MOLYBDENUM OXIDE-CONTAINING THIN FILM AND MOLYBDENUM AMIDE COMPOUND

机译:制造含氧化钼的薄膜起始材料的方法,用于形成含氧化钼的薄膜和酰胺钼的化合物

摘要

The present invention relates to a process for producing a thin film, which comprises introducing a vapor containing a molybdenum compound obtained by vaporizing a thin film forming raw material containing a compound represented by the following general formula (I) into a gas phase and introducing an oxidizing gas to decompose and / And reacting the molybdenum oxide to form a thin film on the substrate. Wherein, R 1, R 2 denotes a straight-chain or branched alkyl group having a carbon number of 1 ~ 4, R 3 represents a t- butyl or t- amyl, y represents 0 or 2, x is y is zero And when y is 2, R 1 and R 2 which are present may be the same or different.
机译:薄膜的制造方法技术领域本发明涉及薄膜的制造方法,其包括将含有通过将含有下述通式(I)表示的化合物的薄膜形成用原料气化而得到的,含有钼化合物的蒸气,并向气相中引入。氧化性气体分解和/或使氧化钼反应以在基板上形成薄膜。其中,R 1, R 2 表示碳原子数为1〜4的直链或支链烷基,R 3 表示叔丁基或叔戊基,y表示0或2,x为y为零,并且当y为2时,存在的R 1 和R 2可能是相同或不同。

著录项

  • 公开/公告号KR101912127B1

    专利类型

  • 公开/公告日2018-10-26

    原文格式PDF

  • 申请/专利权人 가부시키가이샤 아데카;

    申请/专利号KR20137027972

  • 发明设计人 사토 히로키;우에야마 준지;

    申请日2012-05-11

  • 分类号C23C16/40;C07C211/03;C07F11;H01L21/28;H01L21/285;

  • 国家 KR

  • 入库时间 2022-08-21 12:36:51

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