embedded image "/> METHOD FOR MANUFACTURING MOLYBDENUM OXIDE-CONTAINING THIN FILM, STARTING MATERIAL FOR FORMING MOLYBDENUM OXIDE-CONTAINING THIN FILM, AND MOLYBDENUM AMIDE COMPOUND
首页> 外国专利> METHOD FOR MANUFACTURING MOLYBDENUM OXIDE-CONTAINING THIN FILM, STARTING MATERIAL FOR FORMING MOLYBDENUM OXIDE-CONTAINING THIN FILM, AND MOLYBDENUM AMIDE COMPOUND

METHOD FOR MANUFACTURING MOLYBDENUM OXIDE-CONTAINING THIN FILM, STARTING MATERIAL FOR FORMING MOLYBDENUM OXIDE-CONTAINING THIN FILM, AND MOLYBDENUM AMIDE COMPOUND

机译:制造含氧化钼的薄膜的方法,用于形成含氧化钼的薄膜的起始材料和酰胺钼化合物

摘要

Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, R1 and R2 each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R3 represents a t-butyl group or a t-amyl group, y represents 0 or 2, x is 4 when y is 0, or x is 2 when y is 2, wherein R1 and R2 that are plurally present may be the same or different.; embedded image
机译:公开了一种制造含氧化钼的薄膜的方法,该方法包括将用于形成包含由以下通式(I)表示的化合物的薄膜的原料汽化以产生包含钼酰胺化合物的蒸气,将所获得的蒸气引入到所述含钼氧化物的薄膜中。在基板上,进一步引入氧化气体以引起分解和/或化学反应,从而在基板上形成薄膜。式中,R 1 和R 2 分别表示具有1至4个碳原子的直链或支链烷基,R 3 代表叔丁基或叔戊基,y代表0或2,y为0时x为4,或当y为2时x为2,其中R 1 和R 2 可以相同或不同。 “嵌入式图像”

著录项

  • 公开/公告号US2014141165A1

    专利类型

  • 公开/公告日2014-05-22

    原文格式PDF

  • 申请/专利权人 HIROKI SATO;JUNJI UEYAMA;

    申请/专利号US201214112125

  • 发明设计人 HIROKI SATO;JUNJI UEYAMA;

    申请日2012-05-11

  • 分类号C23C16/40;

  • 国家 US

  • 入库时间 2022-08-21 16:08:40

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