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Thermoelectric Properties of n-Type Molybdenum Disulfide (MoS2) Thin Film by Using a Simple Measurement Method

机译:n型二硫化钼(MoS2)薄膜的热电性质的简单测量方法

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摘要

In this paper, a micrometre thin film of molybdenum disulfide (MoS ) is characterized for thermoelectric properties. The sample was prepared through mechanical exfoliation of a molybdenite crystal. The Seebeck coefficient measurement was performed by generating a temperature gradient across the sample and recording the induced electrical voltage, and for this purpose a simple measurement setup was developed. In the measurement, platinum was utilized as reference material in the electrodes. The Seebeck value of MoS was estimated to be approximately −600 µV/K at a temperature difference of 40 °C. The negative sign indicates that the polarity of the material is n-type. For measurement of the thermal conductivity, the sample was sandwiched between the heat source and the heat sink, and a steady-state power of 1.42 W was provided while monitoring the temperature difference across the sample. Based on Fourier’s law of conduction, the thermal conductivity of the sample was estimated to be approximately 0.26 Wm K . The electrical resistivity was estimated to be 29 Ω cm. The figure of merit of MoS was estimated to be 1.99 × 10 .
机译:在本文中,对一微米的二硫化钼薄膜(MoS)进行了热电性能表征。通过对辉钼矿晶体进行机械剥离来制备样品。通过在样品上产生温度梯度并记录感应电压来进行塞贝克系数测量,为此目的,开发了一种简单的测量装置。在测量中,铂被用作电极中的参考材料。在40°C的温度差下,MoS的塞贝克值估计约为-600 µV / K。负号表示材料的极性为n型。为了测量热导率,将样品夹在热源和散热器之间,并提供1.42 W的稳态功率,同时监控整个样品的温差。根据傅立叶传导定律,样品的热导率估计约为0.26 Wm K。电阻率估计为29Ωcm。 MoS的品质因数估计为1.99×10。

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