Rashba spin-orbit coupling induced electron-spin polarization in a realistic 3-layered semiconductor heterostructure

摘要

In layered semiconductor heterostructure, there exists spin-orbit coupling (SOC), which can induce electron-spin polarization. Considering a realistic 3-layered semiconductor heterostructure, InSb/In_xGa_(1-x)As/GaSb, we present a theoretical study of spin polarized transport by the Rashba-SOC type. An obvious electron-spin polarization effect is found in such a 3-layered system, and its degree is related to in-plane wave vector, Rashba-SOC strength and intermediate-layer parameters. Both magnitude and sign of spin polarization can be manipulated by tuning interfacial confining electric field or fabricating intermediate layer properly. These interesting features may be useful for exploring new way of spin injection and designing controllable spin filter for spintronics applications.