Optical filtering devices in SiO_2/AlGaAs superlattice structures

摘要

In this work, the properties of the photonic bandgap (PBG) and Omni-directional photonic bandgap (Omni-PBG) of a quasi-one-dimensional photonic crystal (PC) are studied, in both TE and TM polarization modes. The PC is made of SiO2 and AlxGa1-xAs layers, alternatively, where x is the content of aluminum atoms in the GaAs slab. Using the transfer matrix method (TMM), the calculations are carried out within Maxwell's equation framework, to express the magnetic field of each medium in terms of electric. This model reduces the numerical calculation time and enables us to investigate the PBG and the Omni-PBG properties in the superlattices. We show that by varying the content and geometrical parameters, one can easily block the transmittance of the electromagnetic wave in the PC. The numerical results may be useful in designing of optical filtering nano-devices.