Realization of quantum-dot cellular automata using semiconductor quantum dots

摘要

We demonstrate that a quantum-dot cellular automata device can be fabricated using electron beam lithographically defined gates on GaAs/AlGaAs heterostructure materials, and that by tuning the four quantum dot (J. Phys. C: Solid State Phys. 21 (1988) L893) system polarization of one double dot can lead to polarization in the neighboring double dot (Phys. Rev. B 67 (2003) 033302). The polarization is detected using a 1-D or 0-D channel defined next to one pair of double dots which acts as a non-invasive voltage probe (Phys. Rev. Lett. 70 (1993) 1311). Ultimately a cellular automata device should be isolated from reservoirs to prevent charge fluctuations caused by co-tunneling. The non-invasive voltage probe is used to show that coupled double dots isolated from reservoirs can be made to have a sharper polarization transition. By studying the broadening of the polarization signal from a coupled double dot system isolated from reservoirs, we deduce the charge dephasing times for intra dot scattering to be more than 0.2 ns (Phys. Rev. B 67 (2003) 073302).