机译:退火温度对真空沉积法在n-Si(100)衬底上生长的ZnO薄膜和Pd / ZnO肖特基接触的性能的影响
Department of Electronics Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005, India;
Department of Electronics Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005, India;
Department of Electronics Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005, India;
Department of Electronics Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005, India;
ZnO thin film; Thermal annealing; Crystalline size; Schottky diode; Resistivity;
机译:ZnO种子层对n-Si衬底上生长的Pd / ZnO薄膜肖特基接触电学特性的影响
机译:热蒸发法在n-Si衬底上生长的Pd / ZnO薄膜基肖特基二极管的平均势垒高度和理查森常数
机译:Sn和Zn种子层对n-Si衬底上生长的Pd / ZnO薄膜肖特基二极管电学特性的影响
机译:基于N-Si衬底生长溶胶 - 凝胶衍生ZnO薄膜结构和光学性质的研究
机译:通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和(Zn,Mg)O。
机译:使用定制的原子层沉积生长的ZnO薄膜基质电导率对细胞形态发生和增殖的影响
机译:ZnO薄膜的退火对n-Si上Au / ZnO肖特基接触特征参数的影响