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Effects of substrate conductivity on cell morphogenesis and proliferation using tailored atomic layer deposition-grown ZnO thin films

机译:使用定制的原子层沉积生长的ZnO薄膜基质电导率对细胞形态发生和增殖的影响

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摘要

We demonstrate that ZnO films grown by atomic layer deposition (ALD) can be employed as a substrate to explore the effects of electrical conductivity on cell adhesion, proliferation, and morphogenesis. ZnO substrates with precisely tunable electrical conductivity were fabricated on glass substrates using ALD deposition. The electrical conductivity of the film increased linearly with increasing duration of the ZnO deposition cycle (thickness), whereas other physical characteristics, such as surface energy and roughness, tended to saturate at a certain value. Differences in conductivity dramatically affected the behavior of SF295 glioblastoma cells grown on ZnO films, with high conductivity (thick) ZnO films causing growth arrest and producing SF295 cell morphologies distinct from those cultured on insulating substrates. Based on simple electrostatic calculations, we propose that cells grown on highly conductive substrates may strongly adhere to the substrate without focal-adhesion complex formation, owing to the enhanced electrostatic interaction between cells and the substrate. Thus, the inactivation of focal adhesions leads to cell proliferation arrest. Taken together, the work presented here confirms that substrates with high conductivity disturb the cell-substrate interaction, producing cascading effects on cellular morphogenesis and disrupting proliferation, and suggests that ALD-grown ZnO offers a single-variable method for uniquely tailoring conductivity.
机译:我们证明了通过原子层沉积(ALD)生长的ZnO膜可以用作衬底来探索导电性对细胞粘附,增殖和形态发生的影响。使用ALD沉积在玻璃基板上制造了具有可精确调节的电导率的ZnO基板。膜的电导率随ZnO沉积周期(厚度)的增加而线性增加,而其他物理特性(例如表面能和粗糙度)趋于饱和至某个值。电导率的差异极大地影响了在ZnO膜上生长的SF295胶质母细胞瘤细胞的行为,高电导率(厚)的ZnO膜导致生长停滞并产生不同于在绝缘基板上培养的SF295细胞形态。基于简单的静电计算,由于细胞与基底之间增强的静电相互作用,我们建议在高导电性基底上生长的细胞可以牢固地粘附在基底上,而不会形成粘着-粘附复合物。因此,粘着斑的失活导致细胞增殖停滞。综上所述,此处介绍的工作证实了具有高电导率的底物会干扰细胞与底物的相互作用,对细胞形态发生产生级联效应并破坏增殖,并表明ALD生长的ZnO提供了一种用于唯一调整电导率的单变量方法。

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