Drain current versus drain voltage characteristics for an analytical Al0.25Ga0.75N/GaN superlattice MOSFET

摘要

In present analysis initially authors have studied the variation of mobility with lattice temperature in Nitride based superlattice MOSFETs and have compared the results with temperature dependent measured mobility of two dimensional electrons in AlGaN/GaN superlattice structure. Based on these mobilities a superlattice MOSFET is designed in which static characteristics following different scattering mechanisms are discussed.