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3MeV-Electron Beam Induced Threshold Voltage Shifts and Drain Current Degradation on ZVN3320FTA amp;amp; ZVP3310FTA Commercial MOSFETs

机译：3MEV - 电子束诱导阈值电压偏移和漏极电流降解ZVN3320FTA＆amp上的漏极电流降解; ZVP3310FTA商业MOSFET.

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Sheik Fareed Ookar Abubakkar; Nurul Fadzlin Hasbullah; Nor Farahidah Zabah; Yusof Abdullah;
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年度 2014
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1. THRESHOLD VOLTAGE AND DRAIN CURRENT INVESTIGATION OF POWER MOSFET ZVN3320FTA BY 2D SIMULATIONS [J] . Ramani Kannan, Hesham Khalid, Indragandhi.V, International journal of simulation: systems, science and technology . 2018,第6aaPagea2期

机译：2D模拟电源MOSFET ZVN3320FTA的阈值电压和漏极电流研究
2. Empirical model for temperature dependent threshold voltage and drain current-voltage characteristics of thin film short-channel SOI MOSFETs [J] . Vaneeta Aggarwal, R S Gupta Indian Journal of Pure & Applied Physics . 1999,第9期

机译：薄膜短沟道SOI MOSFET的温度相关阈值电压和漏极电流-电压特性的经验模型
3. Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs [J] . Jose Orti Gonzalez, Olayiwola Alatise IEEE Transactions on Power Electronics . 2021,第3期

机译：BTI诱导的阈值电压在SiC MOSFET中串扰射击电流的影响
4. 3MeV-Electron Beam Induced Threshold Voltage Shifts and Drain Current Degradation on ZVN3320FTA amp; ZVP3310FTA Commercial MOSFETs [C] . Abubakkar S.F.O., Hasbullah N.F., Zabah N.F., International conference on computer and communication engineering . 2014

机译：3MEV - 电子束诱导阈值电压移位和ZVN3320FTA＆ZVP3310FTA商用MOSFET上的漏极电流降解
5. Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions. [D] . Ashraf, Nabil Shovon. 2011

机译：45 nm栅极长度n-MOSFET陷阱引起的阈值电压波动仿真的比较分析和分析模型预测。
6. Current-clamp experiments on primary hippocampal neurons shed light on the role of L-type voltage-gated calcium channels in depolarization shifts [O] . Helmut Kubista, Lena Rubi, Petra Geier, 2011

机译：初级海马神经元的电流钳实验揭示了L型电压门控钙通道在去极化移位中的作用
7. Modeling of Threshold Voltage and Drain Current of Uniaxial Strained p-MOSFETs [O] . Chaudhry Amit, Sangwan Sonu, Nath Roy Jatindra 2011

机译：单轴应变p-MOSFET的阈值电压和漏极电流建模

3MeV-Electron Beam Induced Threshold Voltage Shifts and Drain Current Degradation on ZVN3320FTA amp;amp; ZVP3310FTA Commercial MOSFETs

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