机译:具有InGaN / AlGaN超晶格应变消除层和AlGaN势垒的GaN基近紫外LED的性能改进
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China,Sino Nitride Semiconductor Co., Ltd, Dongguan 523500, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China,Sino Nitride Semiconductor Co., Ltd, Dongguan 523500, China;
Light-emitting diodes (LEDs); GaN-based; AlGaN barrier; Strain relief layer (SRL);
机译:绿色QW LED的性能改进,在屏障中的不同掺杂,在Ingan / GaN接口处使用Inaln中间层和应变补偿AlGaN中间层
机译:AlGaN / InGaN超晶格势垒的蓝色InGaN多个量子阱发光二极管的效率提高
机译:基于AlGaN / AlN / InGaN / GaN的双异质结构中的电荷密度建模,包括InGaN层应变松弛
机译:具有AlGaN / InGaN超晶格势垒的蓝色InGaN发光二极管的下垂改善
机译:AlGaN合金中的生长动力学和超晶格的自发形成研究。
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:基于在AlGaN缓冲层上生长的基于AlN / GaN的超晶格的单片集成UV / IR光电探测器