机译:新型Al_(0.25)Ga_(0.75)N / GaN高电子迁移率晶体管,具有部分蚀刻的AlGaN层
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
HEMT; Electric field modulation effect; Power device;
机译:霍尔和光致发光研究对In_(0.15)Ga_(0.85)As / Al_(0.25)Ga_(0.75)As / GaAs高电子迁移率中心处附加In_(0.3)Ga_(0.7)As层的厚度的影响晶体管
机译:AlGaN层中部分硅掺杂的Al0.25Ga0.75N / GaN高电子迁移率晶体管的击穿电压分析
机译:Al_(0.25)Ga_(0.75)N / GaN / SiC高电子迁移率晶体管的I-V和电流深电平瞬态光谱的异常和缺陷表征
机译:Delta掺杂AL_(0.25)GA_(0.75)N和GAN外延层的性质
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:ALGAN / GAN高电子迁移率晶体管的无芳型嵌入式欧姆触点:蚀刻化学和金属方案的研究
机译:si,GaN和alGaN / GaN高电子迁移率晶体管(HEmT)晶片的非接触迁移率,载流子密度和薄层电阻测量。