Streaming transport of two dimensional electron gas in AlGaN/GaN/AlGaN double heterostructures

摘要

Streaming transports of the two-dimensional electron gas (2DEG) in AlGaN/GaN/AlGaN double heterostructures (DHs) are investigated by using the ensemble Monte Carlo simulation method. The dependence of streaming transport on basic parameters of DHs, such as Al composition, GaN channel width, interface roughness, and temperature, is obtained. It is demonstrated that streaming transports of 2DEG in DHs only can be realized by careful choice of those basic parameters and the externally applied electric field parallel to the interface. Weak alloy disorder (ADO) and interface roughness (IFR) scatterings, which can be obtained by using low Al compositions and wide GaN channels, are of benefit to streaming transport in DHs. On the other hand, it is found that dislocation scattering does not play an obvious influence on the transient drift velocity, compared to ADO and IFR scatterings.